vishay siliconix sud40n02-3m3p new product document number: 69819 s-80260-rev. a, 04-feb-08 www.vishay.com 1 n-channel 20-v (d-s), 175 c mosfet features ? trenchfet ? power mosfet ? 100 % r g tested applications ? server product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ) 20 0.0033 at v gs = 10 v 40 30 nc 0.0044 at v gs = 4.5 v 40 to-252 s gd top v ie w drain connected to ta b order number: sud40 n 02-3m3p-e3 (lead (p b )-free) n-channel mosfet g d s notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 40 a a t c = 100 c 40 a t a = 25 c 24.4 b t a = 100 c 17.2 b pulsed drain current i dm 100 continuous source-drain diode current t c = 25 c i s 40 a t a = 25 c 2.8 b maximum power dissipation t c = 25 c p d 79 w t c = 100 c 39.5 t a = 25 c 3.3 b t a = 100 c 1.6 b operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b steady state r thja 37 45 c/w maximum junction-to-case steady state r thjc 1.5 1.9 rohs compliant
www.vishay.com 2 document number: 69819 s-80260-rev. a, 04-feb-08 vishay siliconix sud40n02-3m3p new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient v ds /t j i d = 250 a 21 mv/c v gs(th) temperature coefficient v gs(th) /t j - 6.9 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 3 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 100 c 20 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.0027 0.0033 v gs = 4.5 v, i d = 20 a 0.0036 0.0044 forward transconductance a g fs v ds = 15 v, i d = 20 a 100 s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 6520 pf output capacitance c oss 1430 reverse transfer capacitance c rss 770 total gate charge q g v ds = 10 v, v gs = 10 v, i d = 50 a 105 160 nc v ds = 10 v, v gs = 4.5 v, i d = 50 a 50 75 gate-source charge q gs 17 gate-drain charge q gd 14 gate resistance r g f = 1 mhz 1.2 1.9 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 0.2 i d ? 50 a, v gen = 4.5 v, r g = 1 40 60 ns rise time t r 30 45 turn-off delay time t d(off) 67 101 fall time t f 33 50 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 0.2 i d ? 50 a, v gen = 10 v, r g = 1 13 20 rise time t r 711 turn-off delay time t d(off) 40 60 fall time t f 914 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 40 a pulse diode forward current a i sm 100 body diode voltage v sd i s = 20 a 0.81 1.2 v body diode reverse recovery time t rr i f = 50 a, di/dt = 100 a/s, t j = 25 c 38 57 ns body diode reverse recovery charge q rr 34 51 nc reverse recovery fall time t a 18 ns reverse recovery rise time t b 20
document number: 69819 s-80260-rev. a, 04-feb-08 www.vishay.com 3 vishay siliconix sud40n02-3m3p new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current capacitance 0 20 40 60 8 0 0.0 0.4 0. 8 1.2 1.6 2.0 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10thr u 4 v v gs =3 v v gs =2 v 0.0024 0.002 8 0.0032 0.0036 0.0040 0 204060 8 0 100 - d to s on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =10 v v gs =4.5 v c rss 0 2000 4000 6000 8 000 04 8 12 16 20 c oss c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) transfer characteristics on-resistance vs. v gs vs. temperature gate charge 0.0 0.6 1.2 1. 8 2.4 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = - 55 c t c = 125 c 0.000 0.002 0.004 0.006 0.00 8 0.010 246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t a =25 c t a = 125 c i d =20a 0 2 4 6 8 10 0 204060 8 0 100 120 i d =50a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =16 v v ds =10 v
www.vishay.com 4 document number: 69819 s-80260-rev. a, 04-feb-08 vishay siliconix sud40n02-3m3p new product typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature threshold voltage single pulse power, junction-to-case 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 175 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) i d =20a v gs =10 v ,4.5 v 0.4 0. 8 1.2 1.6 2.0 2.4 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) 50 100 150 200 250 0 1 1 1 0 0 . 00.01 time (s) po w er ( w ) 0.1 forward diode voltage vs. temperature single pulse power, junction-to-ambient safe operating area, junction-to-ambient 0.0 0.2 0.4 0.6 0. 8 1.0 t j = 150 c 10 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s t j =25 c 1 100 0 50 100 150 200 100 10 01 . 00.1 time (s) po w er ( w ) 1 0.01 100 - drain c u rrent (a) i d v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 10 ms 100 ms dc 10 s 0.1 1 10 t a =25 c single p u lse limited b yr ds(on) * 1s b v dss 100 1 0.01 0.1 10 1000 0.001
document number: 69819 s-80260-rev. a, 04-feb-08 www.vishay.com 5 vishay siliconix sud40n02-3m3p new product typical characteristics 25 c, unless otherwise noted ** the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for case s where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. safe operating area, junction-to-case current derating**, junction-to-case power derating**, junction-to-case 0.01 100 1 100 0.01 - drain c u rrent (a) i d 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified dc 10 ms 0.1 1 10 10 t a =25 c single p u lse limited b yr ds(on) * 1ms b v dss 1000 0.001 0 30 60 90 120 150 0 25 50 75 100 125 150 175 t c - case temperat u re (c) i d - drain c u rrent (a) package limited 0 20 40 60 8 0 100 0 25 50 75 100 125 150 175 t c - case temperat u re (c) po w er ( w ) current derating**, junction-to-ambient power derating**, ju nction-to-ambient 0 6 12 1 8 24 30 0 25 50 75 100 125 150 175 t a -am b ient temperat u re (c) i d - drain c u rrent (a) 0 1 2 3 4 0 25 50 75 100 125 150 175 t a -am b ient temperat u re (c) po w er ( w )
www.vishay.com 6 document number: 69819 s-80260-rev. a, 04-feb-08 vishay siliconix sud40n02-3m3p new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69819. normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 70 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 0.02 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse 0.02 0.05
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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